Confinement-induced InAs/GaSb heterojunction electron–hole bilayer tunneling field-effect transistor
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چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2018
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.5012948